SIDC14D120H8X1SA1 Hinnakujundus (USD) [34382tk Laos]
- 1 pcs$1.19870
- Osa number:
- SIDC14D120H8X1SA1
- Tootja:
- Infineon Technologies
- Täpsem kirjeldus:
- DIODE GEN PURP 1.2KV 25A WAFER.
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - üksikud, Elektrijuhi moodulid, Transistorid - bipolaarsed (BJT) - RF, Transistorid - bipolaarsed (BJT) - massiivid, Türistorid - SCR, Dioodid - alaldid - ühekordsed, Transistorid - JFET-id and Transistorid - IGBT-moodulid ...
- Konkurentsieelis:
- We specialize in Infineon Technologies SIDC14D120H8X1SA1 electronic components. SIDC14D120H8X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC14D120H8X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC14D120H8X1SA1 Toote atribuudid
Osa number :
SIDC14D120H8X1SA1
Tootja :
Infineon Technologies
Kirjeldus :
DIODE GEN PURP 1.2KV 25A WAFER
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
1200V
Praegune - keskmine puhastatud (Io) :
25A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.97V @ 25A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
20µA @ 1200V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
Die
Tarnija seadme pakett :
Sawn on foil
Töötemperatuur - ristmik :
-40°C ~ 175°C
Viimased uudised
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