IDP30E65D1XKSA1 Hinnakujundus (USD) [47232tk Laos]
- 1 pcs$0.66478
- 10 pcs$0.59788
- 100 pcs$0.48065
- 500 pcs$0.39489
- 1,000 pcs$0.30951
- Osa number:
- IDP30E65D1XKSA1
- Tootja:
- Infineon Technologies
- Täpsem kirjeldus:
- DIODE GEN PURP 650V 60A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - DIAC-d, SIDAC-id, Dioodid - RF, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - FET, MOSFET - massiivid, Transistorid - programmeeritav unijunktsioon, Transistorid - bipolaarsed (BJT) - massiivid, Dioodid - alaldid - massiivid and Türistorid - TRIAC-d ...
- Konkurentsieelis:
- We specialize in Infineon Technologies IDP30E65D1XKSA1 electronic components. IDP30E65D1XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP30E65D1XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDP30E65D1XKSA1 Toote atribuudid
Osa number :
IDP30E65D1XKSA1
Tootja :
Infineon Technologies
Kirjeldus :
DIODE GEN PURP 650V 60A TO220-2
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
650V
Praegune - keskmine puhastatud (Io) :
60A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.7V @ 30A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
64ns
Praegune - vastupidine leke @ Vr :
40µA @ 650V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Through Hole
Pakett / kohver :
TO-220-2
Tarnija seadme pakett :
PG-TO220-2-1
Töötemperatuur - ristmik :
-40°C ~ 175°C
Viimased uudised
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-
SE20FJHM3/I
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