Vishay Semiconductor Diodes Division - VS-HFA08PB120-N3

KEY Part #: K6434205

VS-HFA08PB120-N3 Hinnakujundus (USD) [21267tk Laos]

  • 1 pcs$1.93788
  • 500 pcs$1.78715

Osa number:
VS-HFA08PB120-N3
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 1.2KV 8A TO247AC. Rectifiers 8A 1200V Ultrafast 28ns HEXFRED
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - sillaldid, Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - FET, MOSFET - üksikud, Elektrijuhi moodulid, Türistorid - TRIAC-d, Transistorid - IGBT - üksikud and Transistorid - JFET-id ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division VS-HFA08PB120-N3 electronic components. VS-HFA08PB120-N3 can be shipped within 24 hours after order. If you have any demands for VS-HFA08PB120-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA08PB120-N3 Toote atribuudid

Osa number : VS-HFA08PB120-N3
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 1.2KV 8A TO247AC
Sari : HEXFRED®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 1200V
Praegune - keskmine puhastatud (Io) : 8A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 3.3V @ 8A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 95ns
Praegune - vastupidine leke @ Vr : 10µA @ 1200V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Through Hole
Pakett / kohver : TO-247-2
Tarnija seadme pakett : TO-247AC Modified
Töötemperatuur - ristmik : -55°C ~ 150°C

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