Vishay Semiconductor Diodes Division - RGP10J-E3/53

KEY Part #: K6457893

RGP10J-E3/53 Hinnakujundus (USD) [735693tk Laos]

  • 1 pcs$0.05116
  • 12,000 pcs$0.05090

Osa number:
RGP10J-E3/53
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 600V 1A DO204AL. Diodes - General Purpose, Power, Switching 1.0A 600 Volt 250ns Trim Leads
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - JFET-id, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - massiivid, Elektrijuhi moodulid, Türistorid - SCR, Türistorid - SCR - moodulid, Dioodid - Zener - massiivid and Transistorid - bipolaarsed (BJT) - RF ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division RGP10J-E3/53 electronic components. RGP10J-E3/53 can be shipped within 24 hours after order. If you have any demands for RGP10J-E3/53, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10J-E3/53 Toote atribuudid

Osa number : RGP10J-E3/53
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 600V 1A DO204AL
Sari : Automotive, AEC-Q101, Superectifier®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 150ns
Praegune - vastupidine leke @ Vr : 5µA @ 600V
Mahtuvus @ Vr, F : 15pF @ 4V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : DO-204AL, DO-41, Axial
Tarnija seadme pakett : DO-204AL (DO-41)
Töötemperatuur - ristmik : -65°C ~ 175°C

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