Vishay Semiconductor Diodes Division - SE30PAGHM3/I

KEY Part #: K6428852

SE30PAGHM3/I Hinnakujundus (USD) [795249tk Laos]

  • 1 pcs$0.04651
  • 14,000 pcs$0.04215

Osa number:
SE30PAGHM3/I
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 400V 3A DO221BC. Rectifiers 3A, 400V, ESD PROTECTION, SMPA
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - RF, Türistorid - SCR, Dioodid - alaldid - ühekordsed, Dioodid - alaldid - massiivid, Transistorid - FET, MOSFET - üksikud, Transistorid - IGBT-moodulid, Elektrijuhi moodulid and Türistorid - SCR - moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division SE30PAGHM3/I electronic components. SE30PAGHM3/I can be shipped within 24 hours after order. If you have any demands for SE30PAGHM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE30PAGHM3/I Toote atribuudid

Osa number : SE30PAGHM3/I
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 400V 3A DO221BC
Sari : eSMP®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 400V
Praegune - keskmine puhastatud (Io) : 3A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.16V @ 3A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 1.3µs
Praegune - vastupidine leke @ Vr : 5µA @ 400V
Mahtuvus @ Vr, F : 13pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-221BC, SMA Flat Leads Exposed Pad
Tarnija seadme pakett : DO-221BC (SMPA)
Töötemperatuur - ristmik : -55°C ~ 175°C

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