Vishay Semiconductor Diodes Division - G3SBA60L-6000M3/51

KEY Part #: K6541157

[4086tk Laos]


    Osa number:
    G3SBA60L-6000M3/51
    Tootja:
    Vishay Semiconductor Diodes Division
    Täpsem kirjeldus:
    BRIDGE RECT 1PHASE 600V 2.3A GBU.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - RF, Transistorid - FET, MOSFET - üksikud, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - FET, MOSFET - massiivid, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - JFET-id, Türistorid - SCR and Türistorid - DIAC-d, SIDAC-id ...
    Konkurentsieelis:
    We specialize in Vishay Semiconductor Diodes Division G3SBA60L-6000M3/51 electronic components. G3SBA60L-6000M3/51 can be shipped within 24 hours after order. If you have any demands for G3SBA60L-6000M3/51, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    G3SBA60L-6000M3/51 Toote atribuudid

    Osa number : G3SBA60L-6000M3/51
    Tootja : Vishay Semiconductor Diodes Division
    Kirjeldus : BRIDGE RECT 1PHASE 600V 2.3A GBU
    Sari : -
    Osa olek : Obsolete
    Dioodi tüüp : Single Phase
    Tehnoloogia : Standard
    Pinge - tipp-tagumine (max) : 600V
    Praegune - keskmine puhastatud (Io) : 2.3A
    Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 2A
    Praegune - vastupidine leke @ Vr : 5µA @ 600V
    Töötemperatuur : -55°C ~ 150°C (TJ)
    Paigaldus tüüp : Through Hole
    Pakett / kohver : 4-SIP, GBU
    Tarnija seadme pakett : GBU

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