Toshiba Semiconductor and Storage - 1SS307E,L3F

KEY Part #: K6453229

1SS307E,L3F Hinnakujundus (USD) [3127807tk Laos]

  • 1 pcs$0.19775
  • 10 pcs$0.14040
  • 25 pcs$0.11533
  • 100 pcs$0.09223
  • 250 pcs$0.06706
  • 500 pcs$0.05449
  • 1,000 pcs$0.04192
  • 2,500 pcs$0.03773

Osa number:
1SS307E,L3F
Tootja:
Toshiba Semiconductor and Storage
Täpsem kirjeldus:
DIODE GEN PURP 80V 100MA SC79. Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - eriotstarbelised, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - IGBT - massiivid, Transistorid - FET, MOSFET - RF, Dioodid - alaldid - ühekordsed, Dioodid - alaldid - massiivid, Transistorid - JFET-id and Transistorid - FET, MOSFET - massiivid ...
Konkurentsieelis:
We specialize in Toshiba Semiconductor and Storage 1SS307E,L3F electronic components. 1SS307E,L3F can be shipped within 24 hours after order. If you have any demands for 1SS307E,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS307E,L3F Toote atribuudid

Osa number : 1SS307E,L3F
Tootja : Toshiba Semiconductor and Storage
Kirjeldus : DIODE GEN PURP 80V 100MA SC79
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 80V
Praegune - keskmine puhastatud (Io) : 100mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 100mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 10nA @ 80V
Mahtuvus @ Vr, F : 6pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SC-79, SOD-523
Tarnija seadme pakett : SC-79
Töötemperatuur - ristmik : 150°C (Max)

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