Vishay Semiconductor Diodes Division - SE70PJHM3/87A

KEY Part #: K6443292

[7384tk Laos]


    Osa number:
    SE70PJHM3/87A
    Tootja:
    Vishay Semiconductor Diodes Division
    Täpsem kirjeldus:
    DIODE GEN PURP 600V 2.9A TO277A.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Dioodid - sillaldid, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Türistorid - DIAC-d, SIDAC-id, Transistorid - IGBT - massiivid, Dioodid - RF and Transistorid - FET, MOSFET - RF ...
    Konkurentsieelis:
    We specialize in Vishay Semiconductor Diodes Division SE70PJHM3/87A electronic components. SE70PJHM3/87A can be shipped within 24 hours after order. If you have any demands for SE70PJHM3/87A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SE70PJHM3/87A Toote atribuudid

    Osa number : SE70PJHM3/87A
    Tootja : Vishay Semiconductor Diodes Division
    Kirjeldus : DIODE GEN PURP 600V 2.9A TO277A
    Sari : Automotive, AEC-Q101
    Osa olek : Discontinued at Digi-Key
    Dioodi tüüp : Standard
    Pinge - tagurpidi alalisvool (Vr) (max) : 600V
    Praegune - keskmine puhastatud (Io) : 2.9A (DC)
    Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.05V @ 7A
    Kiirus : Standard Recovery >500ns, > 200mA (Io)
    Vastupidine taastumisaeg (trr) : 2.6µs
    Praegune - vastupidine leke @ Vr : 20µA @ 100V
    Mahtuvus @ Vr, F : 76pF @ 4V, 1MHz
    Paigaldus tüüp : Surface Mount
    Pakett / kohver : TO-277, 3-PowerDFN
    Tarnija seadme pakett : TO-277A (SMPC)
    Töötemperatuur - ristmik : -55°C ~ 175°C

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