V8PAM10-M3/I Hinnakujundus (USD) [478125tk Laos]
- 1 pcs$0.07736
- Osa number:
- V8PAM10-M3/I
- Täpsem kirjeldus:
- DIODE SCHOTTKY 100V 8A DO221BC. Schottky Diodes & Rectifiers If 8A Vrrm 100V Ifsm 100A
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - RF, Transistorid - FET, MOSFET - üksikud, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - IGBT-moodulid, Türistorid - SCR, Elektrijuhi moodulid and Türistorid - TRIAC-d ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division V8PAM10-M3/I electronic components. V8PAM10-M3/I can be shipped within 24 hours after order. If you have any demands for V8PAM10-M3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
V8PAM10-M3/I Toote atribuudid
Osa number :
V8PAM10-M3/I
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE SCHOTTKY 100V 8A DO221BC
Sari :
eSMP®, TMBS®
Osa olek :
Active
Dioodi tüüp :
Schottky
Pinge - tagurpidi alalisvool (Vr) (max) :
100V
Praegune - keskmine puhastatud (Io) :
8A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
780mV @ 8A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
200µA @ 100V
Mahtuvus @ Vr, F :
810pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-221BC, SMA Flat Leads Exposed Pad
Tarnija seadme pakett :
DO-221BC (SMPA)
Töötemperatuur - ristmik :
-40°C ~ 175°C
Viimased uudised
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