S1FLJ-GS18 Hinnakujundus (USD) [2154871tk Laos]
- 1 pcs$0.01725
- 50,000 pcs$0.01716
- Osa number:
- S1FLJ-GS18
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 1A DO219AB. Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - üksikud, Dioodid - alaldid - ühekordsed, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - massiivid, Transistorid - IGBT - massiivid, Türistorid - SCR - moodulid, Türistorid - TRIAC-d and Transistorid - bipolaarsed (BJT) - massiivid ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division S1FLJ-GS18 electronic components. S1FLJ-GS18 can be shipped within 24 hours after order. If you have any demands for S1FLJ-GS18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
S1FLJ-GS18 Toote atribuudid
Osa number :
S1FLJ-GS18
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 1A DO219AB
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
700mA
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.1V @ 1A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
1.8µs
Praegune - vastupidine leke @ Vr :
10µA @ 600V
Mahtuvus @ Vr, F :
4pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-219AB
Tarnija seadme pakett :
DO-219AB (SMF)
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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