S1AHE3_A/I Hinnakujundus (USD) [1546318tk Laos]
- 1 pcs$0.02524
- 15,000 pcs$0.02511
- Osa number:
- S1AHE3_A/I
- Täpsem kirjeldus:
- DIODE GEN PURP 50V 1A DO214AC. Rectifiers 1A 50V 40A@8.3ms Single Die Auto
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR, Transistorid - eriotstarbelised, Transistorid - IGBT - massiivid, Türistorid - DIAC-d, SIDAC-id, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Dioodid - alaldid - ühekordsed and Türistorid - SCR - moodulid ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division S1AHE3_A/I electronic components. S1AHE3_A/I can be shipped within 24 hours after order. If you have any demands for S1AHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
S1AHE3_A/I Toote atribuudid
Osa number :
S1AHE3_A/I
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 50V 1A DO214AC
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
50V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.1V @ 1A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
1.8µs
Praegune - vastupidine leke @ Vr :
1µA @ 50V
Mahtuvus @ Vr, F :
12pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-214AC, SMA
Tarnija seadme pakett :
DO-214AC (SMA)
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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