RGF1JHE3/67A Hinnakujundus (USD) [506068tk Laos]
- 1 pcs$0.07309
- 6,000 pcs$0.06624
- Osa number:
- RGF1JHE3/67A
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - programmeeritav unijunktsioon, Türistorid - SCR - moodulid, Dioodid - sillaldid, Türistorid - DIAC-d, SIDAC-id, Transistorid - FET, MOSFET - RF, Transistorid - IGBT-moodulid and Transistorid - JFET-id ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division RGF1JHE3/67A electronic components. RGF1JHE3/67A can be shipped within 24 hours after order. If you have any demands for RGF1JHE3/67A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGF1JHE3/67A Toote atribuudid
Osa number :
RGF1JHE3/67A
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 1A DO214BA
Sari :
SUPERECTIFIER®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.3V @ 1A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
250ns
Praegune - vastupidine leke @ Vr :
5µA @ 600V
Mahtuvus @ Vr, F :
8.5pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-214BA
Tarnija seadme pakett :
DO-214BA (GF1)
Töötemperatuur - ristmik :
-65°C ~ 175°C
Viimased uudised
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