Vishay Semiconductor Diodes Division - RGF1GHE3/67A

KEY Part #: K6457446

RGF1GHE3/67A Hinnakujundus (USD) [506068tk Laos]

  • 1 pcs$0.07309
  • 6,000 pcs$0.06624

Osa number:
RGF1GHE3/67A
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 400V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 400 Volt 150ns 30 Amp IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - RF, Transistorid - JFET-id, Dioodid - RF, Dioodid - sillaldid, Transistorid - bipolaarsed (BJT) - eelkallutatud m and Türistorid - SCR - moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division RGF1GHE3/67A electronic components. RGF1GHE3/67A can be shipped within 24 hours after order. If you have any demands for RGF1GHE3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGF1GHE3/67A Toote atribuudid

Osa number : RGF1GHE3/67A
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 400V 1A DO214BA
Sari : SUPERECTIFIER®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 400V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 150ns
Praegune - vastupidine leke @ Vr : 5µA @ 400V
Mahtuvus @ Vr, F : 8.5pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214BA
Tarnija seadme pakett : DO-214BA (GF1)
Töötemperatuur - ristmik : -65°C ~ 175°C

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