Infineon Technologies - BAS16WH6327XTSA1

KEY Part #: K6458666

BAS16WH6327XTSA1 Hinnakujundus (USD) [3792433tk Laos]

  • 1 pcs$0.01320
  • 3,000 pcs$0.01313

Osa number:
BAS16WH6327XTSA1
Tootja:
Infineon Technologies
Täpsem kirjeldus:
DIODE GEN PURP 80V 250MA SOT323. Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - üksikud, Elektrijuhi moodulid, Transistorid - programmeeritav unijunktsioon, Transistorid - FET, MOSFET - üksikud, Transistorid - eriotstarbelised, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - IGBT - massiivid and Transistorid - JFET-id ...
Konkurentsieelis:
We specialize in Infineon Technologies BAS16WH6327XTSA1 electronic components. BAS16WH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BAS16WH6327XTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS16WH6327XTSA1 Toote atribuudid

Osa number : BAS16WH6327XTSA1
Tootja : Infineon Technologies
Kirjeldus : DIODE GEN PURP 80V 250MA SOT323
Sari : -
Osa olek : Last Time Buy
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 80V
Praegune - keskmine puhastatud (Io) : 250mA (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 150mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 4ns
Praegune - vastupidine leke @ Vr : 1µA @ 75V
Mahtuvus @ Vr, F : 2pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SC-70, SOT-323
Tarnija seadme pakett : PG-SOT323-3
Töötemperatuur - ristmik : 150°C (Max)

Samuti võite olla huvitatud
  • BAL74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA

  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode