RS1DLHR3G Hinnakujundus (USD) [1402119tk Laos]
- 1 pcs$0.02638
- Osa number:
- RS1DLHR3G
- Tootja:
- Taiwan Semiconductor Corporation
- Täpsem kirjeldus:
- DIODE GEN PURP 200V 800MA SUBSMA.
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - sillaldid, Transistorid - IGBT-moodulid, Türistorid - SCR, Transistorid - FET, MOSFET - RF, Transistorid - FET, MOSFET - üksikud, Transistorid - bipolaarsed (BJT) - RF, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel and Dioodid - alaldid - ühekordsed ...
- Konkurentsieelis:
- We specialize in Taiwan Semiconductor Corporation RS1DLHR3G electronic components. RS1DLHR3G can be shipped within 24 hours after order. If you have any demands for RS1DLHR3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1DLHR3G Toote atribuudid
Osa number :
RS1DLHR3G
Tootja :
Taiwan Semiconductor Corporation
Kirjeldus :
DIODE GEN PURP 200V 800MA SUBSMA
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
200V
Praegune - keskmine puhastatud (Io) :
800mA
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.3V @ 800mA
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
150ns
Praegune - vastupidine leke @ Vr :
5µA @ 200V
Mahtuvus @ Vr, F :
10pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-219AB
Tarnija seadme pakett :
Sub SMA
Töötemperatuur - ristmik :
-55°C ~ 150°C
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