Transphorm Automotive (AEC-Q101) Qualified GaN FETs
Transphorm Automotive (AEC-Q101) Qualified GaN FETs are normally-off devices that offer superior reliability and performance. The devices combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge and crossover loss, and smaller reverse recovery charge.
Features
JEDEC-qualified GaN technologyJunction temperature rating of 175°CDynamic RDS(on) production testedRobust design, defined by
Intrinsic lifetime testsWide gate safety marginTransient over-voltage capabilityVery low QRRReduced crossover loss
Intrinsic lifetime testsWide gate safety marginTransient over-voltage capabilityVery low QRRReduced crossover loss
Applications
AutomotiveDatacom
Transphorm Newest
Transphorm Automotive (AEC-Q101) Qualified GaN FETs are normally-off devices that offer superior reliability and performance.
Date: 2019-08-06Transphorm Half Bridge (DC to DC) Evaluation Platform provides the elements of a simple buck or boost converter for studying switching characteristics and efficiency.
Date: 2019-06-03Transphorm 650V GaN FETs combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies.
Date: 2019-06-03Transphorm 4kW Totem-Pole PFC Board achieves very high efficiency single-phase AC-DC conversion.
Date: 2019-06-03Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies.
Date: 2019-06-03Transphorm 2.5kW Totem-Pole PFC Board achieves very high efficiency single-phase AC-DC conversion.
Date: 2019-06-03
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