| Pilt | KEY osa nr / tootja | Kirjeldus / PDF | Kogus / RFQ |
|---|---|---|---|
 |
Microsemi Corporation |
IGBT 1200V 200A 833W TMAX. |
6404tk Laos |
|
Microsemi Corporation |
IGBT 600V 150A 625W TMAX. |
6527tk Laos |
|
Microsemi Corporation |
IGBT 600V 100A 543W TMAX. |
7172tk Laos |
 |
Microsemi Corporation |
IGBT 600V 100A 625W TO247. |
7328tk Laos |
 |
Microsemi Corporation |
IGBT 600V 100A 543W D3PAK. |
7971tk Laos |
|
Microsemi Corporation |
IGBT 1200V 75A 521W D3PAK. |
9698tk Laos |
|
Microsemi Corporation |
IGBT 600V 78A 337W TO247. |
9697tk Laos |
 |
Microsemi Corporation |
IGBT 1200V 64A 357W TO264. |
9681tk Laos |
|
Microsemi Corporation |
IGBT 600V 100A 543W TO247. |
9681tk Laos |
 |
Microsemi Corporation |
IGBT 900V 43A 250W TO220. |
9681tk Laos |
|
Microsemi Corporation |
IGBT 900V 43A 250W TO247. |
9680tk Laos |
 |
Microsemi Corporation |
IGBT 600V 100A 463W TO264. |
9340tk Laos |
|
Microsemi Corporation |
IGBT 900V 72A 417W TO247. |
9614tk Laos |
|
Microsemi Corporation |
IGBT 600V 93A 415W TO247. |
7917tk Laos |
|
Microsemi Corporation |
IGBT 600V 56A 250W TO247. |
11636tk Laos |
 |
Microsemi Corporation |
INSULATED GATE BIPOLAR TRANSISTO. |
9629tk Laos |
|
Microsemi Corporation |
INSULATED GATE BIPOLAR TRANSISTO. |
9629tk Laos |
|
Microsemi Corporation |
INSULATED GATE BIPOLAR TRANSISTO. |
9627tk Laos |
|
Microsemi Corporation |
INSULATED GATE BIPOLAR TRANSISTO. |
9627tk Laos |
|
Microsemi Corporation |
IGBT 600V 150A 625W TO264. |
9565tk Laos |
Klassifikatsiooni lehed
- Transistorid - IGBT - üksikud - Leht1
- Transistorid - IGBT - üksikud - Leht2
- Transistorid - IGBT - üksikud - Leht3
- Transistorid - IGBT - üksikud - Leht4
- Transistorid - IGBT - üksikud - Leht5
- Transistorid - IGBT - üksikud - Leht6
- Transistorid - IGBT - üksikud - Leht7
- Transistorid - IGBT - üksikud - Leht8
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