eMMC


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KLM4G1FETE-B041

KLM4G1FETE-B041

Samsung Semiconductor

eMMC 5.1 4 GB 1.8, 3.3 V / 3.3 V HS400 11 x 10 x 0.8 mm -25 ~ 85 °C Mass Production.

15482tk Laos

KLM8G1GESD-B03P

KLM8G1GESD-B03P

Samsung Semiconductor

eMMC 5.0 8 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 85 °C Mass Production.

22853tk Laos

KLM8G1GESD-B03Q

KLM8G1GESD-B03Q

Samsung Semiconductor

eMMC 5.0 8 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 105 °C Mass Production.

14400tk Laos

KLM8G1GESD-B04P

KLM8G1GESD-B04P

Samsung Semiconductor

eMMC 5.1 8 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 85 °C Mass Production.

15632tk Laos

KLM8G1GESD-B04Q

KLM8G1GESD-B04Q

Samsung Semiconductor

eMMC 5.1 8 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 105 °C Mass Production.

20904tk Laos

KLM8G1GETF-B041

KLM8G1GETF-B041

Samsung Semiconductor

eMMC 5.1 8 GB 1.8, 3.3 V / 3.3 V HS400 11.5 x 13 x 0.8 mm -25 ~ 85 °C Mass Production.

17324tk Laos

KLM8G1GEUF-B04P

KLM8G1GEUF-B04P

Samsung Semiconductor

eMMC 5.1 8 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 85 °C Mass Production.

22980tk Laos

KLM8G1GEUF-B04Q

KLM8G1GEUF-B04Q

Samsung Semiconductor

eMMC 5.1 8 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 105 °C Mass Production.

22628tk Laos

KLMAG1JETD-B041

KLMAG1JETD-B041

Samsung Semiconductor

eMMC 5.1 16 GB 1.8, 3.3 V / 3.3 V HS400 11.5 x 13 x 0.8 mm -25 ~ 85 °C Mass Production.

17024tk Laos

KLMAG2GESD-B03P

KLMAG2GESD-B03P

Samsung Semiconductor

eMMC 5.0 16 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 85 °C Mass Production.

16293tk Laos

KLMAG2GESD-B03Q

KLMAG2GESD-B03Q

Samsung Semiconductor

eMMC 5.0 16 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 105 °C Mass Production.

16354tk Laos

KLMAG2GESD-B04P

KLMAG2GESD-B04P

Samsung Semiconductor

eMMC 5.1 16 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 85 °C Mass Production.

18823tk Laos

KLMAG2GESD-B04Q

KLMAG2GESD-B04Q

Samsung Semiconductor

eMMC 5.1 16 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 105 °C Mass Production.

17877tk Laos

KLMAG2GEUF-B04P

KLMAG2GEUF-B04P

Samsung Semiconductor

eMMC 5.1 16 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 85 °C Mass Production.

18865tk Laos

KLMAG2GEUF-B04Q

KLMAG2GEUF-B04Q

Samsung Semiconductor

eMMC 5.1 16 GB 1.8 / 3.3 V HS400 11.5 x 13 x 0.8 mm -40 ~ 105 °C Mass Production.

26635tk Laos

KLMBG2JETD-B041

KLMBG2JETD-B041

Samsung Semiconductor

eMMC 5.1 32 GB 1.8, 3.3 V / 3.3 V HS400 11.5 x 13 x 0.8 mm -25 ~ 85 °C Mass Production.

23162tk Laos

KLMBG4GESD-B03P

KLMBG4GESD-B03P

Samsung Semiconductor

eMMC 5.0 32 GB 1.8 / 3.3 V HS400 11.5 x 13 x 1.0 mm -40 ~ 85 °C Mass Production.

21846tk Laos

KLMBG4GESD-B03Q

KLMBG4GESD-B03Q

Samsung Semiconductor

eMMC 5.0 32 GB 1.8 / 3.3 V HS400 11.5 x 13 x 1.0 mm -40 ~ 105 °C Mass Production.

25702tk Laos

KLMBG4GESD-B04P

KLMBG4GESD-B04P

Samsung Semiconductor

eMMC 5.1 32 GB 1.8 / 3.3 V HS400 11.5 x 13 x 1.0 mm -40 ~ 85 °C Mass Production.

22661tk Laos

KLMBG4GESD-B04Q

KLMBG4GESD-B04Q

Samsung Semiconductor

eMMC 5.1 32 GB 1.8 / 3.3 V HS400 11.5 x 13 x 1.0 mm -40 ~ 85 °C Mass Production.

22160tk Laos

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