Vishay Semiconductor Diodes Division - MURS360S-M3/52T

KEY Part #: K6457775

MURS360S-M3/52T Hinnakujundus (USD) [677053tk Laos]

  • 1 pcs$0.05463
  • 6,000 pcs$0.04995

Osa number:
MURS360S-M3/52T
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 600V 3A DO214AA. Rectifiers 3A,600V,50NS,UF RECT,SMD
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - üksikud, Türistorid - SCR, Transistorid - IGBT - üksikud, Dioodid - RF, Türistorid - DIAC-d, SIDAC-id, Transistorid - FET, MOSFET - RF, Transistorid - bipolaarsed (BJT) - RF and Dioodid - Zener - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division MURS360S-M3/52T electronic components. MURS360S-M3/52T can be shipped within 24 hours after order. If you have any demands for MURS360S-M3/52T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURS360S-M3/52T Toote atribuudid

Osa number : MURS360S-M3/52T
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 600V 3A DO214AA
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 3A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.28V @ 4A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 75ns
Praegune - vastupidine leke @ Vr : 10µA @ 600V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AA, SMB
Tarnija seadme pakett : DO-214AA (SMB)
Töötemperatuur - ristmik : -65°C ~ 175°C

Samuti võite olla huvitatud
  • GL41YHE3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.6KV 1A DO213AB. Rectifiers 1 Amp 1600 Volt 30 Amp IFSM

  • RGL34AHE3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Diodes - General Purpose, Power, Switching 50 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34JHE3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM

  • BYM07-400-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 0.5 Amp 400 Volt

  • EGL34B-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5Amp 100 Volt 50ns

  • BYM07-150-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 150 Volt 0.5A 50ns Glass Passivated