Winbond Electronics Tootja, Laos saadaval Winbond Electronics Tooted

KEY osa nr / tootja	Kirjeldus / PDF	Kogus / RFQ
W631GU6MB-12 TR Winbond Electronics	IC SDRAM 1GBIT 800MHZ 96BGA. DRAM 1G DDR3L 1.35V SDRAM, x16, 800MHzT&R	47088tk Laos
W631GG6MB-12 TR Winbond Electronics	IC SDRAM 1GBIT 800MHZ 96BGA. DRAM 1G DDR3 SDRAM, x16, 800MHzT&R	47088tk Laos
W631GG6MB-11 TR Winbond Electronics	IC SDRAM 1GBIT 933MHZ 96BGA. DRAM 1G DDR3 SDRAM, x16, 933MHz,T&R	47088tk Laos
W631GU6MB-11 TR Winbond Electronics	IC SDRAM 1GBIT 933MHZ 96BGA. DRAM 1G DDR3L 1.35V SDRAM, x16, 933MHz,T&R	47088tk Laos
W9425G6KH-5I Winbond Electronics	IC DRAM 256M PARALLEL 66TSOP II. DRAM 256M DDR SDRAM x16, 200Mhz, Ind temp	47109tk Laos
W987D2HBJX6E TR Winbond Electronics	IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mSDR, x32, 166MHz T&R	47612tk Laos
W947D2HBJX6E TR Winbond Electronics	IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mDDR, x32, 166MHz, 65nm T&R	47612tk Laos
W987D2HBJX6I TR Winbond Electronics	IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mSDR, x32, 166MHz, Ind Temp T&R	47612tk Laos
W987D2HBJX7E TR Winbond Electronics	IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mSDR, x32, 133MHz, 65nm T&R	47612tk Laos
W947D2HBJX5E TR Winbond Electronics	IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mDDR, x32, 200MHz T&R	47612tk Laos
W947D2HBJX5I TR Winbond Electronics	IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mDDR, x32, 200MHz, Industrial Temp T&R	47612tk Laos
W9751G8KB25I Winbond Electronics	IC DRAM 512M PARALLEL 60WBGA. DRAM 512M DDR2-800, x8 Ind Temp	47882tk Laos
W9425G6KH-5 Winbond Electronics	IC DRAM 256M PARALLEL 66TSOP II. DRAM 256M DDR SDRAM x16, 200Mhz, 65nm	48363tk Laos
W9816G6JB-6I Winbond Electronics	IC DRAM 16M PARALLEL 60VFBGA. DRAM 16M, SDR SDRAM, 166MHz, Ind temp	48691tk Laos
W947D6HBHX6E TR Winbond Electronics	IC DRAM 128M PARALLEL 60VFBGA. DRAM 128M mDDR, x16, 166MHz, 65nm T&R	49022tk Laos
W987D6HBGX6E TR Winbond Electronics	IC DRAM 128M PARALLEL 54VFBGA. DRAM 128M mSDR, x16, 166MHz T&R	49022tk Laos
W987D6HBGX7E TR Winbond Electronics	IC DRAM 128M PARALLEL 54VFBGA. DRAM 128M mSDR, x16, 133MHz, 65nm T&R	49022tk Laos
W947D6HBHX5E TR Winbond Electronics	IC DRAM 128M PARALLEL 60VFBGA. DRAM 128M mDDR, x16, 200MHz T&R	49022tk Laos
W947D6HBHX5I TR Winbond Electronics	IC DRAM 128M PARALLEL 60VFBGA. DRAM 128M mDDR, x16, 200MHz, Industrial Temp T&R	49022tk Laos
W987D6HBGX6I TR Winbond Electronics	IC DRAM 128M PARALLEL 54VFBGA. DRAM 128M mSDR, x16, 166MHz, Ind Temp T&R	49022tk Laos

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